Summary：Exciting Rapidus Reveals Hokkaido Chip Fab, Aiming 2027 Launch with 60 Partners **Introduction** J

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Exciting Rapidus Reveals Hokkaido Chip Fab, Aiming 2027 Launch with 60 Partners

**Introduction**
Japan’s push to regain a foothold in leading‑edge semiconductor manufacturing took a concrete step forward as Rapidus unveiled details of its new fabrication plant in Hokkaido. The state‑backed consortium said the facility will host extreme‑ultraviolet (EUV) lithography tools and has already produced a working 2 nm gate‑all‑around (GAA) test chip. While the technology milestones are impressive, the company acknowledged that it has yet to secure a committed volume customer for its future output.

**Key Developments**
Rapidus confirmed that EUV scanners from ASML are installed and undergoing qualification, a prerequisite for patterning the dense interconnects required at sub‑3 nm nodes. The prototype 2 nm GAA device, built on a 300 mm wafer, demonstrated transistor performance that matches the roadmap targets set by the International Roadmap for Devices and Systems. In parallel, the consortium announced partnerships with 60 firms spanning equipment makers, material suppliers, and fabless design houses, aiming to create a domestic ecosystem that can support the fab’s ramp‑up. Construction of the cleanroom is slated for completion in 2026, with pilot production expected to begin in early 2027.

**Industry Analysis**
Analysts note that Rapidus’s progress places Japan among the few nations capable of operating EUV at the 2 nm node, a capability currently dominated by TSMC, Samsung, and Intel. However, the absence of a volume